123 Results for : thermally

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    Shakir:Concentration and Temperature Pr
    Medium: Taschenbuch, Einband: Kartoniert / Broschiert, Titel: Concentration and Temperature Profiles within a Monolith Catalyst, Titelzusatz: Resolving Spatio-temporal Concentration and Temperature Profiles within a Fresh and a Thermally- Aged Monolith Catalyst, Autor: Shakir, Osama, Verlag: LAP Lambert Academic Publishing, Sprache: Englisch, Schlagworte: Industrielle Chemie und Fertigungstechnologien, Rubrik: Chemische Technik, Seiten: 100, Informationen: Paperback, Gewicht: 165 gr, Verkäufer: averdo
    • Shop: averdo
    • Price: 43.39 EUR excl. shipping
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    Deng:Poly (Acrylonitrile-co-1-Vinylimid
    Erscheinungsdatum: 21.05.2012, Medium: Taschenbuch, Einband: Kartoniert / Broschiert, Titel: Poly (Acrylonitrile-co-1-Vinylimidazole): A New Carbon Fiber Precursor, Titelzusatz: Melt Processable and Thermally Crosslinkable Carbon Fiber Precursor, Autor: Deng, Wenjin // W. Smith, Jr. Dennis, Verlag: LAP Lambert Academic Publishing, Sprache: Englisch, Schlagworte: Industrielle Chemie und Fertigungstechnologien, Rubrik: Chemische Technik, Seiten: 180, Informationen: Paperback, Gewicht: 286 gr, Verkäufer: averdo
    • Shop: averdo
    • Price: 58.39 EUR excl. shipping
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    Endura MT500JR Youth Helmet - Helme
    Endura’s MT500JR Youth Helmet takes its design inspiration directly from the award-winning, adult-sized, MT500 Helmet. The helmet may be smaller in size, but it doesn’t compromise on comfort or protection. The helmet comes with Koroyd inserts which provide enhanced energy absorption while keeping the weight low and ventilation high. Koroyd technology engineered protection Tens of thousands of co-polymer extruded tubes thermally welded to create an unparalleled consistent and fully engineered core, ready to be cut, shaped, CNC machined, thermoformed or laminated and further integrated into the best sport and protection products that give you the edge. The cores plastically deform for higher speed impacts, absorbing energy linearly. Up to 84% of the material thickness can be utilised in case of an accident. Existing energy absorbers densify around 60%. All of this is packed into an impressively lightweight package. You’ll barely feel that the MT500JR is there but, if you crash, you’ll be glad it is
    • Shop: Wiggle DACH
    • Price: 71.00 EUR excl. shipping
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    Endura MT500JR Youth Helmet - Helme
    Endura’s MT500JR Youth Helmet takes its design inspiration directly from the award-winning, adult-sized, MT500 Helmet. The helmet may be smaller in size, but it doesn’t compromise on comfort or protection. The helmet comes with Koroyd inserts which provide enhanced energy absorption while keeping the weight low and ventilation high. Koroyd technology engineered protection Tens of thousands of co-polymer extruded tubes thermally welded to create an unparalleled consistent and fully engineered core, ready to be cut, shaped, CNC machined, thermoformed or laminated and further integrated into the best sport and protection products that give you the edge. The cores plastically deform for higher speed impacts, absorbing energy linearly. Up to 84% of the material thickness can be utilised in case of an accident. Existing energy absorbers densify around 60%. All of this is packed into an impressively lightweight package. You’ll barely feel that the MT500JR is there but, if you crash, you’ll be glad it is
    • Shop: Wiggle DACH
    • Price: 80.00 EUR excl. shipping
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    Antec New Solution VSK-3000E - Mini Tower - Mikro-ATX - ohne Netzteil - Schwarz - USB/Audio (0-761345-92033-9)
    Kurzinfo: Antec New Solution VSK-3000E - Mini Tower - Mikro-ATX - ohne Netzteil - Schwarz - USB/Audio Gruppe Systemgehäuse Hersteller Antec Hersteller Art. Nr. 0-761345-92033-9 Modell New Solution VSK-3000E EAN/UPC 0761345920339 Produktbeschreibung: Antec New Solution VSK-3000E - Mini Tower - Mikro-ATX Produkttyp Systemschrank Formfaktor Mini Tower Farbe Schwarz E/A-Anschlüsse 1 x USB 3.0 1 x USB 2.0 1 x Mikrofon 1 x Kopfhörer Unterstützte Motherboards microATX, Mini-ITX Systemgehäuse-Merkmale TAC2.0 (Thermally advantaged chassis version 2.0), Flüssigkühlungsbohrungen Stromversorgungsgerät Ohne Netzteil Abmessungen (Breite x Tiefe x Höhe) 17.3 cm x 39.3 cm x 36.5 cm Gewicht 4.1 kg Ausführliche Details Allgemein Formfaktor Mini Tower Max. Mainboard-Größe Mikro-ATX Unterstützte Motherboards microATX, Mini-ITX Anzahl interner Einbauschächte 3 Anzahl von vorne zugänglicher Einbauschächte 3 Farbe Schwarz Kühlsystem Rückseite : 92 mm Lüfter x 1 / Auslass Vorderseite : 92 mm Lüfterhalterung x
    • Shop: JACOB Computer
    • Price: 37.77 EUR excl. shipping
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    DN2535N3-G - MOSFET, N-CH, TO-92, 350 V, 0,15 A, 1 W
    DN2535 is a low threshold depletion mode (normally-on) transistor utilizing an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.• High input impedance• Low input capacitance• Fast switching speeds• Low on-resistance• Free from secondary breakdown• Low input and output leakage Technical Data: • BVdsx: 350 V• RDS: 25 Ohm• Ugs: -1,5 ... -3,5 V• Ic: 150 mA
    • Shop: reichelt elektronik
    • Price: 0.62 EUR excl. shipping
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    DN3135N8-G - MOSFET, N-CH, SOT-89, 350 V, 0,18 A, 1,3 W
    DN3135 is a low threshold depletion-mode (normally-on) transistor utilizing an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.• High input impedance• Low input capacitance• Fast switching speeds• Low on-resistance• Free from secondary breakdown• Low input and output leakage Technical Data: • BVdsx: 350 V• RDS: 35 Ohm• Ugs (off): -1,5 ... -3,5 V• Ic: 180 mA
    • Shop: reichelt elektronik
    • Price: 0.77 EUR excl. shipping
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    DN3765K4-G - MOSFET, N-CH, DPAK, 650 V, 0,2 A, 2,5 W
    This depletion-mode (normally-on) transistor utilizes an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.• High input impedance• Low input capacitance• Fast switching speeds• Low on-resistance• Free from secondary breakdown• Low input and output leakage Technical Data: • BVdsx: 650 V• RDS: 8 Ohm• Ugs (Off): -1,5 ... -3,5 V • Ic: 200 mA
    • Shop: reichelt elektronik
    • Price: 2.20 EUR excl. shipping
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    DN3535N8-G - MOSFET, N-CH, SOT-89, 350 V, 0,2 A, 1,6 W
    DN3525 is a low threshold depletion-mode (normally-on) transistor utilizing an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.• High input impedance• Low input capacitance• Fast switching speeds• Low on-resistance• Free from secondary breakdown• Low input and output leakage Technical Data: • BVdsx: 350 V• RDS: 10 Ohm• Ugs (off): -1,5 ... -3,5 V• Ic: 300 mA
    • Shop: reichelt elektronik
    • Price: 0.70 EUR excl. shipping
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    DN2530N8-G - MOSFET, N-CH, SOT-89, 300 V, 0,2 A, 1,6 W
    The DN2530 is a low threshold depletion-mode (normally-on) transistor utilizing an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.• High input impedance• Low input capacitance• Fast switching speeds• Low on-resistance• Free from secondary breakdown• Low input and output leakage Technical Data: • BVdsx: 300 V• RDS: 12 Ohm• Ugs: -1,0 ... -3,5 V
    • Shop: reichelt elektronik
    • Price: 0.90 EUR excl. shipping

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