113 Results for : amplifying

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    Amplifying Our Witness
    Amplifying Our Witness ab 19.99 € als epub eBook: . Aus dem Bereich: eBooks, Sonstiges,
    • Shop: hugendubel
    • Price: 19.99 EUR excl. shipping
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    Amplifying that Still Small Voice
    Amplifying that Still Small Voice ab 48.49 € als gebundene Ausgabe: . Aus dem Bereich: Bücher, Wissenschaft, Theologie,
    • Shop: hugendubel
    • Price: 48.49 EUR excl. shipping
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    Amplifying that Still Small Voice
    Amplifying that Still Small Voice ab 50.99 € als Taschenbuch: . Aus dem Bereich: Bücher, Taschenbücher, Geist & Wissen,
    • Shop: hugendubel
    • Price: 50.99 EUR excl. shipping
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    Amplifying Our Witness
    Amplifying Our Witness ab 21.99 € als Taschenbuch: Giving Voice to Adolescents with Developmental Disabilities. Aus dem Bereich: Bücher, Taschenbücher, Geist & Wissen,
    • Shop: hugendubel
    • Price: 21.99 EUR excl. shipping
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    DN2535N3-G - MOSFET, N-CH, TO-92, 350 V, 0,15 A, 1 W
    DN2535 is a low threshold depletion mode (normally-on) transistor utilizing an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.• High input impedance• Low input capacitance• Fast switching speeds• Low on-resistance• Free from secondary breakdown• Low input and output leakage Technical Data: • BVdsx: 350 V• RDS: 25 Ohm• Ugs: -1,5 ... -3,5 V• Ic: 150 mA
    • Shop: reichelt elektronik
    • Price: 0.62 EUR excl. shipping
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    DN3135N8-G - MOSFET, N-CH, SOT-89, 350 V, 0,18 A, 1,3 W
    DN3135 is a low threshold depletion-mode (normally-on) transistor utilizing an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.• High input impedance• Low input capacitance• Fast switching speeds• Low on-resistance• Free from secondary breakdown• Low input and output leakage Technical Data: • BVdsx: 350 V• RDS: 35 Ohm• Ugs (off): -1,5 ... -3,5 V• Ic: 180 mA
    • Shop: reichelt elektronik
    • Price: 0.77 EUR excl. shipping
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    DN3765K4-G - MOSFET, N-CH, DPAK, 650 V, 0,2 A, 2,5 W
    This depletion-mode (normally-on) transistor utilizes an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.• High input impedance• Low input capacitance• Fast switching speeds• Low on-resistance• Free from secondary breakdown• Low input and output leakage Technical Data: • BVdsx: 650 V• RDS: 8 Ohm• Ugs (Off): -1,5 ... -3,5 V • Ic: 200 mA
    • Shop: reichelt elektronik
    • Price: 2.20 EUR excl. shipping
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    DN3535N8-G - MOSFET, N-CH, SOT-89, 350 V, 0,2 A, 1,6 W
    DN3525 is a low threshold depletion-mode (normally-on) transistor utilizing an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.• High input impedance• Low input capacitance• Fast switching speeds• Low on-resistance• Free from secondary breakdown• Low input and output leakage Technical Data: • BVdsx: 350 V• RDS: 10 Ohm• Ugs (off): -1,5 ... -3,5 V• Ic: 300 mA
    • Shop: reichelt elektronik
    • Price: 0.70 EUR excl. shipping
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    DN2530N8-G - MOSFET, N-CH, SOT-89, 300 V, 0,2 A, 1,6 W
    The DN2530 is a low threshold depletion-mode (normally-on) transistor utilizing an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.• High input impedance• Low input capacitance• Fast switching speeds• Low on-resistance• Free from secondary breakdown• Low input and output leakage Technical Data: • BVdsx: 300 V• RDS: 12 Ohm• Ugs: -1,0 ... -3,5 V
    • Shop: reichelt elektronik
    • Price: 0.90 EUR excl. shipping
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    DN3135K1-G - MOSFET, N-CH, SOT-23, 350 V, 0,18 A, 0,36 W
    DN3135 is a low threshold depletion-mode (normally-on) transistor utilizing an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.• High input impedance• Low input capacitance• Fast switching speeds• Low on-resistance• Free from secondary breakdown• Low input and output leakage Technical Data: • BVdsx: 350 V• RDS: 35 Ohm• Ugs (off): -1,5 ... -3,5 V• Ic: 180 mA
    • Shop: reichelt elektronik
    • Price: 0.55 EUR excl. shipping

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