44 Results for : inductance

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    Stehende-Induktivität• Toleranz: ±10 %• Inductance: 1 kHz, 0,1 Vac• DCR max.: 242 Ohm• Rated DC I: 26 mA• Betriebstemperatur: -40°C ... 85°C• Maße (BxTxH): 7,8 x 7,0 x 7,5 mm
    • Shop: reichelt elektronik
    • Price: 0.99 EUR excl. shipping
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    PolarHV HiPerFETPower MOSFETN-Channel Enhancement Mode = 200 nsAvalanche RatedFast Intrinsic DiodeFeaturesInternational standard packagesFast recovery diodeUnclamped Inductive Switching (UIS) ratedLow package inductance- easy to drive and to protectAdvantagesEasy to mountSpace savingsHigh power density
    • Shop: reichelt elektronik
    • Price: 15.20 EUR excl. shipping
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    Power MOSFETN-Channel Enhancement ModeAvalanche RatedFeaturesSilicon Chip on Direct-Copper-Bond Substrate- High Power Dissipation- Isolated Mounting Surface- 2500V Electrical IsolationUnclamped Inductive Switching (UIS) RatedLow package inductance- Easy to Drive and to ProtectFast Intrinsic DiodeAdvantagesEasy to MountSpace SavingsHigh Power Density
    • Shop: reichelt elektronik
    • Price: 19.98 EUR excl. shipping
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    LCD DIGITAL MULTIMETER VOLTMETER VIELFACHMESSGERŽäT FERVI T053 Technische daten: DCV: 200 mV - 2 V - 20 V - 200 V - 1000 V 0,8% ACV: 200 mV - 2 V - 20 V - 750 V 1,2% DCA / ACA: 200 ÁA - 2 mA - 20 mA - 200 mA - 20 A 2.0% RES: 200O - 2kO - 20kO - 200kO - 2MO - 20MO - 200MO 1% CAP: 20 nF / 200 nF / 2 ÁF / 20 ÁF / 200 ÁF / 2000 ÁF 2,5% Inductance: 2 mH - 20mH - 200 mH - 2 H - 20 H Battery: 9 V Temperature: -20 €C ŽÀ 1000 €C Frequency: 10 mHz Audible continuity and diode test hFE transistor test: 0 ~ 1000 Weight: 400 g
    • Shop: ManoMano
    • Price: 72.90 EUR excl. shipping
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    Color: Black CFExpress to NVME for Xbox Bandwidth Speed: PCIe4.0 gen4x2 (support CFexpress B specification full speed) Product use: suitable for the extension of the CFexpress card slot to the M.2 NVME 2230 hard drive Friendly reminder: XBOX dedicated expansion card, currently only supports Western Digital CH SN530 hard drive. Material advantages: high-quality gold-plated connectors are used, high-frequency and low-resistance high-quality materials are used for the PCB, and the PCB is precision-crafted. Design advantages: Differential signal enhanced layout design, no CAF micro short circuit phenomenon, high-speed signal data transmission, no parasitic capacitance and parasitic inductance signal attenuation interference. Note: Outlets and voltage differ internationally and this product may require an adapter or converter for use in your destination. Please check compatibility before purchasing.
    • Shop: G2A
    • Price: 28.98 EUR excl. shipping
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    Erscheinungsdatum: 21.04.2017, Medium: Taschenbuch, Einband: Kartoniert / Broschiert, Titel: Novel Design of Spiral Inductor for Optimized Inductance and Q Factor, Autor: Gupta, Manish Kumar // Mishra, Shakshi, Verlag: LAP Lambert Academic Publishing, Sprache: Englisch, Rubrik: Elektronik // Elektrotechnik, Nachrichtentechnik, Seiten: 88, Informationen: Paperback, Gewicht: 149 gr, Verkäufer: averdo
    • Shop: averdo
    • Price: 33.09 EUR excl. shipping
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    Power MOSFET(Electrically Isolated Tab)N-Channel Enhancement ModeAvalanche RatedFast Intrinsic DiodeFeaturesSilicon chip on Direct-Copper-Bond substrate- High power dissipation- Isolated mounting surface- 2500V electrical isolationInternational standard packageFast recovery diodeUnclamped Inductive Switching (UIS) ratedLow package inductance- easy to drive and to protectAdvantagesEasy to mountSpace savingsHigh power density
    • Shop: reichelt elektronik
    • Price: 11.72 EUR excl. shipping
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    Erscheinungsdatum: 01.09.2010, Medium: Taschenbuch, Einband: Kartoniert / Broschiert, Titel: Field Oriented Control of IPMSM, Titelzusatz: with Variable Direct and Quadrature Axis Inductance, Autor: Islam, F. M. Rabiul, Verlag: LAP Lambert Academic Publishing, Sprache: Englisch, Rubrik: Elektronik // Elektrotechnik, Nachrichtentechnik, Seiten: 108, Informationen: Paperback, Gewicht: 179 gr, Verkäufer: averdo
    • Shop: averdo
    • Price: 43.39 EUR excl. shipping
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    PolarHT HiPerFET Power MOSFETN-Channel Enhancement ModeAvalanche RatedFast Intrinsic DiodeFeatures• International standard package• Encapsulating epoxy meets UL 94 V-0, flammability classification• miniBLOC with Aluminium nitride isolation• Fast recovery diode• Unclamped Inductive Switching (UIS) rated• Low package inductance - easy to drive and to protectAdvantages• Easy to mount• Space savings• High power density
    • Shop: reichelt elektronik
    • Price: 29.99 EUR excl. shipping
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    Power MOSFETISOPLUS247TM(Electrically Isolated Back Surface)N-Channel Enhancement ModeAvalanche RatedFast Intrinsic DiodeFeaturesInternational standard isolated packageUL recognized packageSilicon chip on Direct-Copper-Bond substrate- High power dissipation- Isolated mounting surface- 2500V electrical isolationUnclamped Inductive Switching (UIS) ratedLow package inductance- easy to drive and to protectFast intrinsic diodeAdvantagesEasy to mountSpace savingsHigh power density
    • Shop: reichelt elektronik
    • Price: 17.25 EUR excl. shipping


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