1,082 Results for : normally

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    DN3535N8-G - MOSFET, N-CH, SOT-89, 350 V, 0,2 A, 1,6 W
    DN3525 is a low threshold depletion-mode (normally-on) transistor utilizing an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.• High input impedance• Low input capacitance• Fast switching speeds• Low on-resistance• Free from secondary breakdown• Low input and output leakage Technical Data: • BVdsx: 350 V• RDS: 10 Ohm• Ugs (off): -1,5 ... -3,5 V• Ic: 300 mA
    • Shop: reichelt elektronik
    • Price: 0.70 EUR excl. shipping
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    DN2530N8-G - MOSFET, N-CH, SOT-89, 300 V, 0,2 A, 1,6 W
    The DN2530 is a low threshold depletion-mode (normally-on) transistor utilizing an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.• High input impedance• Low input capacitance• Fast switching speeds• Low on-resistance• Free from secondary breakdown• Low input and output leakage Technical Data: • BVdsx: 300 V• RDS: 12 Ohm• Ugs: -1,0 ... -3,5 V
    • Shop: reichelt elektronik
    • Price: 0.90 EUR excl. shipping
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    DN3135K1-G - MOSFET, N-CH, SOT-23, 350 V, 0,18 A, 0,36 W
    DN3135 is a low threshold depletion-mode (normally-on) transistor utilizing an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.• High input impedance• Low input capacitance• Fast switching speeds• Low on-resistance• Free from secondary breakdown• Low input and output leakage Technical Data: • BVdsx: 350 V• RDS: 35 Ohm• Ugs (off): -1,5 ... -3,5 V• Ic: 180 mA
    • Shop: reichelt elektronik
    • Price: 0.55 EUR excl. shipping
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    DN3545N8-G - MOSFET, N-CH, TO-89, 450 V, 0,2 A, 1,6 W
    These depletion-mode (normally-on) transistors utilize an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.• High input impedance• Low input capacitance• Fast switching speeds• Low on-resistance• Free from secondary breakdown• Low input and output leakage Technical Data: • BVdsx: 450 V• RDS: 20 Ohm• Ugs (off): -1,5 ... -3,5 V• Ic: 200 mA
    • Shop: reichelt elektronik
    • Price: 0.77 EUR excl. shipping
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    DN2540N3-G - MOSFET, N-Kanal, 400 V, 0,15 A, Rds(on) 17 Ohm, TO-92
    DN2540 is a low threshold depletion mode (normally-on) transistor utilizing an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.• High input impedance• Low input capacitance• Fast switching speeds• Low on-resistance• Free from secondary breakdown• Low input and output leakage Technical Data: • BVdsx: 400 V• RDS: 25 Ohm• Ugs (off): -1,5 ... -3,5 V• Ic: 150 mA
    • Shop: reichelt elektronik
    • Price: 0.98 EUR excl. shipping
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    DN2540N5-G - MOSFET, N-CH, TO-220, 400 V, 0,15 A, 15 W
    DN2540 is a low threshold depletion mode (normally-on) transistor utilizing an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.• High input impedance• Low input capacitance• Fast switching speeds• Low on-resistance• Free from secondary breakdown• Low input and output leakage Technical Data: • BVdsx: 400 V• RDS: 25 Ohm• Ugs (off): -1,5 ... -3,5 V• Ic: 150 mA
    • Shop: reichelt elektronik
    • Price: 1.80 EUR excl. shipping
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    Assos Spring Fall Knee Warmers - Kniewärmer
    Chilly autumn and spring days, or even an early start during summer, can soon leave the knees feeling exposed and stiff. But thanks to the lightly insulated Spring Fall Knee Warmers you can add warmth to this vulnerable joint and keep muscles feeling supple and strong. Dealing quickly with sweat is just as vital for comfort too. And here too the knee warmers excel. The aggressive moisture-wicking fabric deals rapidly with any sweat you generate, preventing it from pooling on the skin and causing irritation. Not only are they great for lightweight insulation, but the warmers also provide protection against the sun's rays during a sunny day of cycling. Meanwhile, Assos' Circular Seamless technology virtually eliminates the bunching normally associated with knee warmers, making them barely noticeable once you pull them on.
    • Shop: Wiggle DACH
    • Price: 45.00 EUR excl. shipping
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    Assos Spring Fall Knee Warmers - Kniewärmer
    Chilly autumn and spring days, or even an early start during summer, can soon leave the knees feeling exposed and stiff. But thanks to the lightly insulated Spring Fall Knee Warmers you can add warmth to this vulnerable joint and keep muscles feeling supple and strong. Dealing quickly with sweat is just as vital for comfort too. And here too the knee warmers excel. The aggressive moisture-wicking fabric deals rapidly with any sweat you generate, preventing it from pooling on the skin and causing irritation. Not only are they great for lightweight insulation, but the warmers also provide protection against the sun's rays during a sunny day of cycling. Meanwhile, Assos' Circular Seamless technology virtually eliminates the bunching normally associated with knee warmers, making them barely noticeable once you pull them on.
    • Shop: Wiggle DACH
    • Price: 45.00 EUR excl. shipping
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    Assos Spring Fall Knee Warmers - Kniewärmer
    Chilly autumn and spring days, or even an early start during summer, can soon leave the knees feeling exposed and stiff. But thanks to the lightly insulated Spring Fall Knee Warmers you can add warmth to this vulnerable joint and keep muscles feeling supple and strong. Dealing quickly with sweat is just as vital for comfort too. And here too the knee warmers excel. The aggressive moisture-wicking fabric deals rapidly with any sweat you generate, preventing it from pooling on the skin and causing irritation. Not only are they great for lightweight insulation, but the warmers also provide protection against the sun's rays during a sunny day of cycling. Meanwhile, Assos' Circular Seamless technology virtually eliminates the bunching normally associated with knee warmers, making them barely noticeable once you pull them on.
    • Shop: Wiggle DACH
    • Price: 45.00 EUR excl. shipping
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    Normally Hyperbolic Invariant Manifolds
    Normally Hyperbolic Invariant Manifolds ab 90.99 € als Taschenbuch: The Noncompact Case. Softcover reprint of the original 1st ed. 2013. Aus dem Bereich: Bücher, Taschenbücher, Naturwissenschaft,
    • Shop: hugendubel
    • Price: 90.99 EUR excl. shipping

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