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DN3135K1-G - MOSFET, N-CH, SOT-23, 350 V, 0,18 A, 0,36 W

DN3135 is a low threshold depletion-mode (normally-on) transistor utilizing an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.• High input impedance• Low input capacitance• Fast switching speeds• Low on-resistance• Free from secondary breakdown• Low input and output leakage Technical Data: • BVdsx: 350 V• RDS: 35 Ohm• Ugs (off): -1,5 ... -3,5 V• Ic: 180 mA

Shop: reichelt elektronik
Price: 0.55 EUR excl. shipping

DN3545N8-G - MOSFET, N-CH, TO-89, 450 V, 0,2 A, 1,6 W

These depletion-mode (normally-on) transistors utilize an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.• High input impedance• Low input capacitance• Fast switching speeds• Low on-resistance• Free from secondary breakdown• Low input and output leakage Technical Data: • BVdsx: 450 V• RDS: 20 Ohm• Ugs (off): -1,5 ... -3,5 V• Ic: 200 mA

Shop: reichelt elektronik
Price: 0.77 EUR excl. shipping

DN2540N3-G - MOSFET, N-Kanal, 400 V, 0,15 A, Rds(on) 17 Ohm, TO-92

DN2540 is a low threshold depletion mode (normally-on) transistor utilizing an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.• High input impedance• Low input capacitance• Fast switching speeds• Low on-resistance• Free from secondary breakdown• Low input and output leakage Technical Data: • BVdsx: 400 V• RDS: 25 Ohm• Ugs (off): -1,5 ... -3,5 V• Ic: 150 mA

Shop: reichelt elektronik
Price: 0.98 EUR excl. shipping

DN2540N5-G - MOSFET, N-CH, TO-220, 400 V, 0,15 A, 15 W

DN2540 is a low threshold depletion mode (normally-on) transistor utilizing an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.• High input impedance• Low input capacitance• Fast switching speeds• Low on-resistance• Free from secondary breakdown• Low input and output leakage Technical Data: • BVdsx: 400 V• RDS: 25 Ohm• Ugs (off): -1,5 ... -3,5 V• Ic: 150 mA

Shop: reichelt elektronik
Price: 1.80 EUR excl. shipping

DN2450K4-G - MOSFET, N-CH, DPAK, 500 V, 0,7 A, 2,5 W

These low threshold depletion-mode (normally-on) transistors utilize an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.• High input impedance• Low input capacitance• Fast switching speeds• Low on-resistance• Free from secondary breakdown• Low input and output leakage Technical Data: • BVdsx: 500 V• Ugs (off): -1,5 ... 3,5 V• RDS: 10 Ohm• Ic: 700 mA

Shop: reichelt elektronik
Price: 0.57 EUR excl. shipping

Thermally Stimulated Relaxation in Solids

Thermally Stimulated Relaxation in Solids ab 106.99 € als Taschenbuch: Softcover reprint of the original 1st ed. 1979. Aus dem Bereich: Bücher, English, International, Englische Taschenbücher,

Shop: hugendubel
Price: 106.99 EUR excl. shipping

Antec New Solution NSK3100 - Midi Tower - mini ITX / micro ATX - ohne Netzteil - mattschwarz (0-761345-93100-7)

Kurzinfo: Antec New Solution NSK3100 - Midi Tower - mini ITX / micro ATX - ohne Netzteil - mattschwarz Gruppe Systemgehäuse Hersteller Antec Hersteller Art. Nr. 0-761345-93100-7 Modell New Solution NSK3100 EAN/UPC 0761345931007 Produktbeschreibung: Antec New Solution NSK3100 - Midi Tower - mini ITX / micro ATX Produkttyp Systemschrank Formfaktor Midi Tower Farbe Mattschwarz E/A-Anschlüsse 2 x USB 3.0 1 x Audio-Line-Out/Kopfhörer 1 x Mikrofon Unterstützte Motherboards microATX, Mini-ITX Systemgehäuse-Merkmale Thermally Advantaged Chassis (TAC), Flüssigkühlungsbohrungen Stromversorgungsgerät Ohne Netzteil Abmessungen (Breite x Tiefe x Höhe) 18 cm x 41.1 cm x 36 cm Gewicht 6.8 kg Ausführliche Details Allgemein Formfaktor Midi Tower Max. Mainboard-Größe Mini ITX / micro ATX Unterstützte Motherboards microATX, Mini-ITX Anzahl interner Einbauschächte 3 Anzahl von vorne zugänglicher Einbauschächte 3 Farbe Mattschwarz Kühlsystem Rückseite : 92 mm Lüfter x 1 Vorderseite : 80 mm Lüfterhalterung x

Shop: JACOB Computer
Price: 51.25 EUR excl. shipping

Antec New Solution VSK-4000E - Mini Tower - ATX - ohne Netzteil - Schwarz - USB/Audio (0-761345-92043-8)

Kurzinfo: Antec New Solution VSK-4000E - Mini Tower - ATX - ohne Netzteil - Schwarz - USB/Audio Gruppe Systemgehäuse Hersteller Antec Hersteller Art. Nr. 0-761345-92043-8 Modell New Solution VSK-4000E EAN/UPC 0761345920438 Produktbeschreibung: Antec New Solution VSK-4000E - Mini Tower - ATX Produkttyp Systemschrank Formfaktor Mini Tower Farbe Schwarz E/A-Anschlüsse 2 x USB 3.0 1 x Mikrofon 1 x Kopfhörer Unterstützte Motherboards ATX, microATX, Mini-ITX Systemgehäuse-Merkmale TAC2.0 (Thermally advantaged chassis version 2.0), Flüssigkühlungsbohrungen Stromversorgungsgerät Ohne Netzteil Abmessungen (Breite x Tiefe x Höhe) 18.5 cm x 44 cm x 41.2 cm Gewicht 5 kg Ausführliche Details Allgemein Formfaktor Mini Tower Max. Mainboard-Größe ATX Unterstützte Motherboards ATX, microATX, Mini-ITX Anzahl interner Einbauschächte 4 Anzahl von vorne zugänglicher Einbauschächte 5 Farbe Schwarz Kühlsystem Rückseite : 120 mm Lüfter x 1 / Auslass Vorderseite : 120 mm Lüfterhalterung x 1 / Einlass Systemgehäuse-Merkmale

Shop: JACOB Computer
Price: 41.22 EUR excl. shipping

Antec Value Solution VSK3000 Elite - Mini Tower - micro ATX - ohne Netzteil - Schwarz - USB/Audio

Kurzinfo: Antec Value Solution VSK3000 Elite - Mini Tower - micro ATX - ohne Netzteil - Schwarz - USB/Audio Gruppe Systemgehäuse Hersteller Antec Hersteller Art. Nr. 0-761345-80000-6 EAN/UPC 0761345800006 Produktbeschreibung: Antec Value Solution VSK3000 Elite - Mini Tower - micro ATX Produkttyp Systemschrank Formfaktor Mini Tower Farbe Schwarz E/A-Anschlüsse 2 x USB 3.0 1 x Mikrofon 1 x Kopfhörer Unterstützte Motherboards microATX, Mini-ITX Systemgehäuse-Merkmale TAC2.0 (Thermally advantaged chassis version 2.0) Stromversorgungsgerät Ohne Netzteil Abmessungen (Breite x Tiefe x Höhe) 18 cm x 41 cm x 37.3 cm Gewicht 3.4 kg Ausführliche Details Allgemein Formfaktor Mini Tower Max. Mainboard-Größe Micro ATX Unterstützte Motherboards microATX, Mini-ITX Anzahl interner Einbauschächte 5 Anzahl von vorne zugänglicher Einbauschächte 1 Produktmaterial SGCC Farbe Schwarz Kühlsystem Rückseite: 120 mm Lüfter x 1 / Auslass Vorderseite: 80/120 mm Lüfterhalterung x 1 / Einlass Linke Seite: 120 mm Lüfterhalterung

Shop: JACOB Computer
Price: 45.46 EUR excl. shipping

LM 5007 MM - Step-Down, fest, 9 ... 75 V, 80 V, SO-8

The LM5007 Step Down Switching Regulator features all of the functions needed to implement low cost, efficient, Buck bias regulators. This high voltage regulator contains an 80 V, 0.7A N-Channel Buck Switch. The device is easy to apply and is provided in the MSOP-8 and the thermally enhanced LLP-8 packages. The regulator is based on a hysteretic control scheme using an on time inversely proportional to V IN. This feature allows the operating frequency to remain relatively constant with load and input voltage variations. The hysteretic control requires no control loop compensation, while providing very fast load transient response. An intelligent current limit is implemented in the LM5007 with forced off time that is inversely proportional to V OUT. This current limiting scheme reduces load current foldback. Additional protection features include: Thermal Shutdown, Vcc undervoltage lockout, gate drive undervoltage lockout, and Max Duty Cycle limiter.

Shop: reichelt elektronik
Price: 5.55 EUR excl. shipping

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