362 Results for : transistors
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Irfan:Organic field effect transistors:
Erscheinungsdatum: 11.12.2014, Medium: Taschenbuch, Einband: Kartoniert / Broschiert, Titel: Organic field effect transistors:How to improve stability and mobility, Titelzusatz: First principle study of the materials from some major classes (phthalocyanines, oligocene, and oligothiophene), Autor: Irfan, Ahmad // Al-Sehemi, Abdullah G. // Zhang, Jingping, Verlag: LAP Lambert Academic Publishing, Sprache: Englisch, Rubrik: Theoretische Chemie, Seiten: 84, Informationen: Paperback, Gewicht: 142 gr, Verkäufer: averdo- Shop: averdo
- Price: 43.39 EUR excl. shipping
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The Transistors
The Transistors ab 4.49 € als epub eBook: . Aus dem Bereich: eBooks, Belletristik,- Shop: hugendubel
- Price: 4.49 EUR excl. shipping
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DN3545N8-G - MOSFET, N-CH, TO-89, 450 V, 0,2 A, 1,6 W
These depletion-mode (normally-on) transistors utilize an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.• High input impedance• Low input capacitance• Fast switching speeds• Low on-resistance• Free from secondary breakdown• Low input and output leakage Technical Data: • BVdsx: 450 V• RDS: 20 Ohm• Ugs (off): -1,5 ... -3,5 V• Ic: 200 mA- Shop: reichelt elektronik
- Price: 0.77 EUR excl. shipping
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DN2450K4-G - MOSFET, N-CH, DPAK, 500 V, 0,7 A, 2,5 W
These low threshold depletion-mode (normally-on) transistors utilize an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.• High input impedance• Low input capacitance• Fast switching speeds• Low on-resistance• Free from secondary breakdown• Low input and output leakage Technical Data: • BVdsx: 500 V• Ugs (off): -1,5 ... 3,5 V• RDS: 10 Ohm• Ic: 700 mA- Shop: reichelt elektronik
- Price: 0.57 EUR excl. shipping
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IRFR9220PBF - MOSFET P-Kanal, -200 V, -3,6 A, Rds(on) 1,5 Ohm, TO-252AA
Power MOSFETFEATURESDynamic dV/dt RatingRepetitive Avalanche RatedSurface Mount (IRFR9220, SiHFR9220)Available in Tape and ReelP-ChannelFast SwitchingDESCRIPTIONThird power MOSFETs technology is the key to Vishay advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFETs design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness.- Shop: reichelt elektronik
- Price: 2.35 EUR excl. shipping
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LM 385 Z - Spannungsreferenz, einstellbar, 1,24 ... 5,3 V, TO-92
The LM185/LM285/LM385 are micropower 3-terminal adjustable band-gap voltage reference diodes. Operating from 1.24 to 5.3V and over a 10 µA to 20mA current range, they feature exceptionally low dynamic impedance and good temperature stability. On-chip trimming is used to provide tight voltage tolerance. Since the LM185 band-gap reference uses only transistors and resistors, low noise and good long-term stability result.- Shop: reichelt elektronik
- Price: 0.95 EUR excl. shipping
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Nanoelectronics
Erscheinungsdatum: 30.10.2012, Medium: Taschenbuch, Einband: Kartoniert / Broschiert, Titel: Nanoelectronics, Titelzusatz: Building transistors at atomic level, Redaktion: Miller-Jones, Edward R., Verlag: FastBook Publishing, Sprache: Englisch, Rubrik: Elektronik // Elektrotechnik, Nachrichtentechnik, Seiten: 112, Informationen: Paperback, Gewicht: 183 gr, Verkäufer: averdo- Shop: averdo
- Price: 35.59 EUR excl. shipping
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NTE 2355 - NPN Silicon Digital Transistors, 50V, 100mA, 0,3 W, TO-92
NPN mit Widerständen bestückter Transistor R1 = 10 kR2 = 10 k- Shop: reichelt elektronik
- Price: 1.07 EUR excl. shipping
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PDTC 143ET NXP - NPN Silicon Digital Transistors, 50V, 100mA, 0,25W, SOT-23
NPN mit Widerständen bestückter Transistor R1 = 4.7 kR2 = 4.7 k- Shop: reichelt elektronik
- Price: 0.04 EUR excl. shipping
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PDTC 143ZT NXP - NPN Silicon Digital Transistors, 50V, 100mA, 0,25W, SOT-23
NPN mit Widerständen bestückter Transistor R1 = 4.7 kR2 = 47 k- Shop: reichelt elektronik
- Price: 0.03 EUR excl. shipping