33 Results for : stripfet
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STD10P6F6 - MOSFET P-Ch 60V 10A 0,16R TO252
STripFET™ F6 Power MOSFETsFeaturesVery low on-resistanceVery low gate chargeHigh avalanche ruggednessLow gate drive power lossDescriptionThese devices are P-channel Power MOSFETs developed using the STripFET™ F6 technology, with a new trench gate structure. The resulting Power MOSFETs exhibit very low RDS(on) in allpackages.ApplicationsSwitching applications- Shop: reichelt elektronik
- Price: 1.05 EUR excl. shipping
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STD20NF20 - MOSFET N-Ch 200V 18A 0,125R TO252
low gate charge STripFET™ Power MOSFETFeaturesExceptional dv/dt capability�Low gate charge�100% avalanche testedDescriptionThis Power MOSFET series realized with STMicroelectronics unique STripFET™ process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced highefficiencyisolated DC-DC converters.Application�Switching applications- Shop: reichelt elektronik
- Price: 1.90 EUR excl. shipping
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STB75NF20 - MOSFET N-Kanal, 200 V, 75 A, RDS(on) 0,028 Ohm, D²Pak
Low gate charge STripFET™ Power MOSFETGeneral featuresExceptional dv/dt capability�Low gate charge�100% Avalanche testedDescriptionThis Power MOSFET series realized with STMicroelectronics unique STripFET™ process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced highefficiencyisolated DC-DC converters.Applications�Switching application- Shop: reichelt elektronik
- Price: 5.50 EUR excl. shipping
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STB100N10F7 - MOSFET N-Ch 100V 80A 0,008R D²Pak
STripFET™ F7 Power MOSFETsFeaturesAmong the lowest RDS(on) on the marketExcellent FoM (figure of merit)Low Crss/Ciss ratio for EMI immunityHigh avalanche ruggednessApplicationsSwitching applicationsDescriptionThese N-channel Power MOSFETs utilize STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.- Shop: reichelt elektronik
- Price: 3.55 EUR excl. shipping
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STD100N10F7 - MOSFET N-Ch 100V 80A 0,008R TO252
STripFET™ F7 Power MOSFETsFeaturesAmong the lowest RDS(on) on the marketExcellent FoM (figure of merit)Low Crss/Ciss ratio for EMI immunityHigh avalanche ruggednessDescriptionThese N-channel Power MOSFETs utilize STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.ApplicationsSwitching applications- Shop: reichelt elektronik
- Price: 2.20 EUR excl. shipping
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STD26P3LLH6 - MOSFET P-Ch 30V 12A 0,03R TO252
STripFET™ VI DeepGATE™ Power MOSFETFeaturesRDS(on) * Qg industry benchmarkExtremely low on-resistance RDS(on)High avalanche ruggednessLow gate input resistanceDescriptionThis device is a P-channel Power MOSFET developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packagesApplicationsSwitching applicationsLCC converters, resonant converters- Shop: reichelt elektronik
- Price: 1.10 EUR excl. shipping
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STP65NF06 - MOSFET N-Ch 60V 60A 110W 0,014R TO220
N-channel 60V - 11.5mO - 60A - STripFET™ II Power MOSFETGeneral featuresStandard level gate drive100% avalanche testedApplicationsSwitching application- Shop: reichelt elektronik
- Price: 1.20 EUR excl. shipping
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STD17NF25 - MOSFET N-Kanal, 250 V, 17 A, Rds(on) 0,14 Ohm, TO252
STripFET™ II Power MOSFETsFeaturesExceptional dv/dt capability100% avalanche testedLow gate chargeDescriptionThese Power MOSFETs have been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the devices suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving requirements.ApplicationsSwitching applications- Shop: reichelt elektronik
- Price: 2.10 EUR excl. shipping
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STP50NF25 - MOSFET N-Kanal, 250 V, 45 A, Rds(on) 0,055 Ohm, TO-220
N-channel 250V - 0.055O - 45A low gate charge STripFET™ Power MOSFETFeatures100% avalanche testedGate charge minimizedLow intrinsic capacitancesApplicationSwitching applications- Shop: reichelt elektronik
- Price: 2.75 EUR excl. shipping
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STB18NF25 - MOSFET N-Ch 250V 17A 0,165R D²Pak
Automotive-grade STripFET™ II Power MOSFETsFeaturesAEC-Q101 qualifiedExceptional dv/dt capability100% avalanche testedLow gate chargeDescriptionThese Power MOSFETs have been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the devices suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications,and applications with low gate charge driving requirements.ApplicationsSwitching applications- Shop: reichelt elektronik
- Price: 1.12 EUR excl. shipping